EPC2016C

ምስሉ ለማጣቀሻ ነው፣ ትክክለኛውን ምስል ለማግኘት እባክዎ ያነጋግሩን።

የአምራች ክፍል	EPC2016C
አምራች	EPC
መግለጫ	GANFET N-CH 100V 18A DIE
ምድብ	discrete ሴሚኮንዳክተር ምርቶች
ቤተሰብ	ትራንዚስተሮች - fets, mosfets - ነጠላ
የህይወት ኡደት:	New from this manufacturer.
ማድረስ፡	DHL FedEx Ups TNT EMS
ክፍያ	T/T Paypal Visa MoneyGram Western Union
ዳታ ገጽ	EPC2016C PDF

ተገኝነት

ለሽያጭ የቀረበ እቃ	134,646
ነጠላ ዋጋ	$ 2.45000

EPC2016C Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

EPC2016C ዝርዝሮች

ዓይነት	መግለጫ
ተከታታይ:	eGaN®
ጥቅል:	Tape & Reel (TR)Cut Tape (CT)
ክፍል ሁኔታ:	Active
fet አይነት:	N-Channel
ቴክኖሎጂ:	GaNFET (Gallium Nitride)
ወደ ምንጭ ቮልቴጅ (vdss) ማፍሰሻ:	100 V
ወቅታዊ - የማያቋርጥ ፍሳሽ (መታወቂያ) @ 25 ° ሴ:	18A (Ta)
የማሽከርከር ቮልቴጅ (ከፍተኛ rd በርቷል፣ ደቂቃ rd በርቷል):	5V
rds በ (ከፍተኛ) @ መታወቂያ፣ ቪ.ኤስ:	16mOhm @ 11A, 5V
vgs(ኛ) (ከፍተኛ) @ መታወቂያ:	2.5V @ 3mA
የበር ክፍያ (qg) (ከፍተኛ) @ vgs:	4.5 nC @ 5 V
ቪጂኤስ (ከፍተኛ):	+6V, -4V
የግቤት አቅም (ciss) (ከፍተኛ) @ vds:	420 pF @ 50 V
fet ባህሪ:	-
የኃይል ብክነት (ከፍተኛ):	-
የአሠራር ሙቀት:	-40°C ~ 150°C (TJ)
የመጫኛ ዓይነት:	Surface Mount
የአቅራቢ መሣሪያ ጥቅል:	Die
ጥቅል / መያዣ:	Die

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