IGT60R190D1SATMA1

ምስሉ ለማጣቀሻ ነው፣ ትክክለኛውን ምስል ለማግኘት እባክዎ ያነጋግሩን።

የአምራች ክፍል	IGT60R190D1SATMA1
አምራች	IR (Infineon Technologies)
መግለጫ	GANFET N-CH 600V 12.5A 8HSOF
ምድብ	discrete ሴሚኮንዳክተር ምርቶች
ቤተሰብ	ትራንዚስተሮች - fets, mosfets - ነጠላ
የህይወት ኡደት:	New from this manufacturer.
ማድረስ፡	DHL FedEx Ups TNT EMS
ክፍያ	T/T Paypal Visa MoneyGram Western Union
ዳታ ገጽ	IGT60R190D1SATMA1 PDF

ተገኝነት

ለሽያጭ የቀረበ እቃ	50
ነጠላ ዋጋ	$ 15.05000

IGT60R190D1SATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IGT60R190D1SATMA1 ዝርዝሮች

ዓይነት	መግለጫ
ተከታታይ:	CoolGaN™
ጥቅል:	Tape & Reel (TR)Cut Tape (CT)
ክፍል ሁኔታ:	Active
fet አይነት:	N-Channel
ቴክኖሎጂ:	GaNFET (Gallium Nitride)
ወደ ምንጭ ቮልቴጅ (vdss) ማፍሰሻ:	600 V
ወቅታዊ - የማያቋርጥ ፍሳሽ (መታወቂያ) @ 25 ° ሴ:	12.5A (Tc)
የማሽከርከር ቮልቴጅ (ከፍተኛ rd በርቷል፣ ደቂቃ rd በርቷል):	-
rds በ (ከፍተኛ) @ መታወቂያ፣ ቪ.ኤስ:	-
vgs(ኛ) (ከፍተኛ) @ መታወቂያ:	1.6V @ 960µA
የበር ክፍያ (qg) (ከፍተኛ) @ vgs:	-
ቪጂኤስ (ከፍተኛ):	-10V
የግቤት አቅም (ciss) (ከፍተኛ) @ vds:	157 pF @ 400 V
fet ባህሪ:	-
የኃይል ብክነት (ከፍተኛ):	55.5W (Tc)
የአሠራር ሙቀት:	-55°C ~ 150°C (TJ)
የመጫኛ ዓይነት:	Surface Mount
የአቅራቢ መሣሪያ ጥቅል:	PG-HSOF-8-3
ጥቅል / መያዣ:	8-PowerSFN

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